Spin splitting of the Landau levels and exchange interaction of a non-ideal two-dimensional electron gas in InxGa1-xAs/InP heterostructures
Identifieur interne : 001226 ( Russie/Analysis ); précédent : 001225; suivant : 001227Spin splitting of the Landau levels and exchange interaction of a non-ideal two-dimensional electron gas in InxGa1-xAs/InP heterostructures
Auteurs : RBID : Pascal:96-0506817Descripteurs français
- Pascal (Inist)
- Etude expérimentale, Effet Shubnikov de Haas, Interaction échange, Gaz électron, Système 2 dimensions, Glissement, Matériau semiconducteur, Indium arséniure, Gallium arséniure, Composé ternaire, Indium phosphure, Composé binaire, Composé minéral, Niveau Landau, Densité niveau énergie, 7320D, InxGa1-xAs, InP, As Ga In, In P.
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- concept : Composé minéral.
English descriptors
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Abstract
Shubnikov-de Haas oscillations corresponding to the spin-resolved Landau levels of the two-dimensional electron gas at an In0.53Ga0.47As-InP heterointerface were studied in wide ranges of magnetic fields (up to 22 T) and tilt angles. Dependences of the spin splitting Δs, on the parallel component of magnetic field were investigated for half-filled Landau levels 0↑, 1↓, 1↑, 2↓ and 2↑. The exchange interaction was shown to be strongly dependent on the broadening and overlapping of adjacent Landau levels. On the basis of this model, the experimental magnetic field dependences of Δs were described. As a result, the absolute value of bare g-factor g0 = 2.9, exchange energy Ex = 30 meV and Landau level broadening Γ = 7-11 meV were obtained.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Spin splitting of the Landau levels and exchange interaction of a non-ideal two-dimensional electron gas in In<sub>x</sub>Ga<sub>1-x</sub>As/InP heterostructures</title><author><name sortKey="Savel Ev, I G" uniqKey="Savel Ev I">I. G. Savel Ev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A F loffe Physical-Technical Institute</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A F loffe Physical-Technical Institute</wicri:noRegion></affiliation></author><author><name sortKey="Kreshchuk, A M" uniqKey="Kreshchuk A">A. M. Kreshchuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A F loffe Physical-Technical Institute</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A F loffe Physical-Technical Institute</wicri:noRegion></affiliation></author><author><name sortKey="Novikov, S V" uniqKey="Novikov S">S. V. Novikov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A F loffe Physical-Technical Institute</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A F loffe Physical-Technical Institute</wicri:noRegion></affiliation></author><author><name sortKey="Shik, A Y" uniqKey="Shik A">A. Y. Shik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>A F loffe Physical-Technical Institute</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>A F loffe Physical-Technical Institute</wicri:noRegion></affiliation></author><author><name sortKey="Remenyi, G" uniqKey="Remenyi G">G. Remenyi</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CNRS, Centre de Recherche sur les Tres Basses Temperatures</s1><s2>38042 Grenoble</s2><s3>FRA</s3><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Kovacs, G" uniqKey="Kovacs G">G. Kovacs</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Eötvös Loránd University</s1><s2>1088 Budapest</s2><s3>HUN</s3><sZ>6 aut.</sZ></inist:fA14><country>Hongrie</country><placeName><settlement type="city">Budapest</settlement><region nuts="2">Hongrie centrale</region></placeName></affiliation></author><author><name sortKey="Podor, B" uniqKey="Podor B">B. Podör</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Research Institute for Technical Physics</s1><s2>1325 Budapest</s2><s3>HUN</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Hongrie</country><placeName><settlement type="city">Budapest</settlement><region nuts="2">Hongrie centrale</region></placeName></affiliation></author><author><name sortKey="Gombos, G" uniqKey="Gombos G">G. Gombos</name><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Research Institute for Technical Physics</s1><s2>1325 Budapest</s2><s3>HUN</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Hongrie</country><placeName><settlement type="city">Budapest</settlement><region nuts="2">Hongrie centrale</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">96-0506817</idno><date when="1996">1996</date><idno type="stanalyst">PASCAL 96-0506817 INIST</idno><idno type="RBID">Pascal:96-0506817</idno><idno type="wicri:Area/Main/Corpus">01A528</idno><idno type="wicri:Area/Main/Repository">01A439</idno><idno type="wicri:Area/Russie/Extraction">001226</idno></publicationStmt><seriesStmt><idno type="ISSN">0953-8984</idno><title level="j" type="abbreviated">J. phys., Condens. matter</title><title level="j" type="main">Journal of physics. Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Electron gas</term><term>Energy-level density</term><term>Exchange interactions</term><term>Experimental study</term><term>Gallium arsenides</term><term>Indium arsenides</term><term>Indium phosphides</term><term>Inorganic compounds</term><term>Landau levels</term><term>Semiconductor materials</term><term>Shubnikov-de Haas effect</term><term>Slip</term><term>Ternary compounds</term><term>Two-dimensional systems</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Effet Shubnikov de Haas</term><term>Interaction échange</term><term>Gaz électron</term><term>Système 2 dimensions</term><term>Glissement</term><term>Matériau semiconducteur</term><term>Indium arséniure</term><term>Gallium arséniure</term><term>Composé ternaire</term><term>Indium phosphure</term><term>Composé binaire</term><term>Composé minéral</term><term>Niveau Landau</term><term>Densité niveau énergie</term><term>7320D</term><term>InxGa1-xAs</term><term>InP</term><term>As Ga In</term><term>In P</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Shubnikov-de Haas oscillations corresponding to the spin-resolved Landau levels of the two-dimensional electron gas at an In<sub>0.53</sub>Ga<sub>0.47</sub>As-InP heterointerface were studied in wide ranges of magnetic fields (up to 22 T) and tilt angles. Dependences of the spin splitting Δ<sub>s</sub>, on the parallel component of magnetic field were investigated for half-filled Landau levels 0↑, 1↓, 1↑, 2↓ and 2↑. The exchange interaction was shown to be strongly dependent on the broadening and overlapping of adjacent Landau levels. On the basis of this model, the experimental magnetic field dependences of Δ<sub>s</sub> were described. As a result, the absolute value of bare g-factor g<sub>0</sub> = 2.9, exchange energy E<sub>x</sub> = 30 meV and Landau level broadening Γ = 7-11 meV were obtained.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0953-8984</s0></fA01><fA02 i1="01"><s0>JCOMEL</s0></fA02><fA03 i2="1"><s0>J. phys., Condens. matter</s0></fA03><fA05><s2>8</s2></fA05><fA06><s2>46</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Spin splitting of the Landau levels and exchange interaction of a non-ideal two-dimensional electron gas in In<sub>x</sub>Ga<sub>1-x</sub>As/InP heterostructures</s1></fA08><fA11 i1="01" i2="1"><s1>SAVEL'EV (I. G.)</s1></fA11><fA11 i1="02" i2="1"><s1>KRESHCHUK (A. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>NOVIKOV (S. V.)</s1></fA11><fA11 i1="04" i2="1"><s1>SHIK (A. Y.)</s1></fA11><fA11 i1="05" i2="1"><s1>REMENYI (G.)</s1></fA11><fA11 i1="06" i2="1"><s1>KOVACS (G.)</s1></fA11><fA11 i1="07" i2="1"><s1>PODÖR (B.)</s1></fA11><fA11 i1="08" i2="1"><s1>GOMBOS (G.)</s1></fA11><fA14 i1="01"><s1>A F loffe Physical-Technical Institute</s1><s2>194021 St Petersburg</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>CNRS, Centre de Recherche sur les Tres Basses Temperatures</s1><s2>38042 Grenoble</s2><s3>FRA</s3><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Eötvös Loránd University</s1><s2>1088 Budapest</s2><s3>HUN</s3><sZ>6 aut.</sZ></fA14><fA14 i1="04"><s1>Research Institute for Technical Physics</s1><s2>1325 Budapest</s2><s3>HUN</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>9025-9036</s1></fA20><fA21><s1>1996</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>577E2</s2><s5>354000066975940080</s5></fA43><fA44><s0>0000</s0><s1>© 1996 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>96-0506817</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of physics. Condensed matter</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>Shubnikov-de Haas oscillations corresponding to the spin-resolved Landau levels of the two-dimensional electron gas at an In<sub>0.53</sub>Ga<sub>0.47</sub>As-InP heterointerface were studied in wide ranges of magnetic fields (up to 22 T) and tilt angles. Dependences of the spin splitting Δ<sub>s</sub>, on the parallel component of magnetic field were investigated for half-filled Landau levels 0↑, 1↓, 1↑, 2↓ and 2↑. The exchange interaction was shown to be strongly dependent on the broadening and overlapping of adjacent Landau levels. On the basis of this model, the experimental magnetic field dependences of Δ<sub>s</sub> were described. As a result, the absolute value of bare g-factor g<sub>0</sub> = 2.9, exchange energy E<sub>x</sub> = 30 meV and Landau level broadening Γ = 7-11 meV were obtained.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C20D</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Effet Shubnikov de Haas</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Shubnikov-de Haas effect</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Interaction échange</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Exchange interactions</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Gaz électron</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Electron gas</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Système 2 dimensions</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Two-dimensional systems</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Glissement</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Slip</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Matériau semiconducteur</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Composé binaire</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Binary compounds</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Composé minéral</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Niveau Landau</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Landau levels</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Densité niveau énergie</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Energy-level density</s0><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>InxGa1-xAs</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>93</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>As Ga In</s0><s4>INC</s4><s5>94</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>In P</s0><s4>INC</s4><s5>95</s5></fC03><fN21><s1>345</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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